JB/T 6307.4-1992 Test methods for power semiconductor modules Bipolar transistor arms and arm pairs

This standard specifies the test methods for the electrical characteristics, thermal characteristics and rated values ​​of bipolar power transistor arms and arm pairs, as well as the thermal cycle load test methods. This standard applies to NPN power transistor modules with a shell rating of 5A and above. If the temperature specified point is appropriately specified, except for the insulation voltage test method, other test methods in this standard are also applicable to bipolar power transistors. JB/T 6307.4-1992 Power semiconductor module test methods Bipolar transistor arms and arm pairs JB/T6307.4-1992 Standard download decompression password: www.bzxz.net

JB/T63Q7.4-199
1 Subject content and scope of application
Mechanical Industry Standard of the People's Republic of China
Test methods for power semiconductor modules
Bipolar transistor arms and arm pairs
JB6307.4—92
This standard specifies the test methods for the electrical characteristics, thermal characteristics and rated values ​​of bipolar power transistor arms and arm pairs and the thermal cycle load test methods.
This standard applies to NPN power transistor modules with a shell rating of 5A and above. This standard is also applicable to PNP power transistor modules as long as the polarity of the power supply and meter is changed. If the temperature specified point is appropriately specified, other test methods of this standard, except for the insulation voltage test method, are also applicable to bipolar power transistors. 2 Reference standards
GB4728 Graphic symbols for electrical diagrams
GB7159 General rules for the formulation of text symbols in electrical technology 3 Terms
3.1 Collector-base cut-off current (IcBo) The reverse current flowing through the collector-base junction at the specified collector-base voltage when the emitter is open (i.e., emitter current Ig=0).
3.2 Emitter-base cut-off current (IzBo) The reverse current flowing through the emitter-base junction at the specified emitter-base voltage when the collector is open (i.e., collector current Ic-0).
Collector-emitter cut-off current (IceO, IcER, Icgx) 3.3
The current flowing through the collector-emitter at the specified collector-emitter voltage when the base is open (i.e., base current Is-0). Sometimes, the base is not open circuit, but there is a specified resistor or a specified circuit between the base and the emitter, then the corresponding collector-emitter cutoff current is represented by Icr and Iciex respectively. 3.4 Base-emitter saturation voltage (Va) The voltage between the base and the emitter under the specified base current or base-emitter voltage condition (when the base current or base-emitter voltage increases beyond this condition, the collector current remains basically unchanged). Note: This is the voltage between the base and the emitter when both the base-emitter junction and the base-collector junction are forward biased. 3.5 Collector-emitter saturation voltage (VcE.) The voltage between the collector and the emitter under the specified base current or base-emitter voltage condition (when the base current or base-emitter voltage increases beyond this condition, the collector current remains basically unchanged). Note: This is the voltage between the collector and the emitter when both the base-emitter junction and the base-collector junction are forward biased. 3.5 Static value of forward current transfer ratio (h21E) The ratio of DC output current to DC input current when the output voltage remains unchanged. 3.7 Delay time (ta)
The time interval from the application of a pulse at the input of the transistor to change it from a non-conducting state to a conducting state to the end of the pulse generating carriers appearing at its output.
JB6307.492
Note: Usually, this time is measured as the time interval between two points corresponding to 10% of the applied pulse and the output pulse amplitude, respectively. 3.8
Rise time ()
When the transistor changes from a non-conducting state to a conducting state, the time interval between the two moments when the pulse value at its output reaches the specified lower limit and upper limit, respectively.
Note: Usually, the lower and upper limits are 10% and 90% of the output pulse amplitude, respectively. Turn-on time (tan) Www.bzxZ.net
The sum of the delay time and the rise time, that is, t plus t. 3.10 (Carrier) storage time (t,)
The time interval from the point at which the pulse applied to the input of the transistor begins to fall to the point at which the pulse generated by the carrier at its output begins to fall.
Note: Usually, this time is measured as the time interval between the 90% points of the two pulse amplitudes. 3.11 Fall time (t)
When the transistor changes from the conducting state to the non-conducting state, the time interval between the two moments when the pulse value at its output reaches the specified upper and lower limits, respectively.
Note: Usually, the upper and lower limits are 90% and 10% of the output pulse amplitude, respectively. 3.12 Turn-off time (ta)
The sum of the storage time and the fall time, that is, t plus. 3.13 (Turn-off) Overlap Time (te)
The time interval from the point when the collector voltage rises to 10% of its off-state peak value to the point when the collector current pulse drops to 10% of its on-state peak value when the transistor changes from the on-state to the non-conducting state. 3.14 Collector-emitter holding voltage (Vceo(aus), Vcerun, Vcex(aun)) The collector-emitter breakdown voltage at a large collector current when the base is open (i.e., base current I-0). At this collector current, the breakdown voltage is insensitive to changes in the collector current. Sometimes, the base is not open, but there is a specified resistor or a specified circuit between the base and the emitter. The corresponding collector-emitter holding voltage is represented by Vcex(s) and Vcex(), respectively. 3.15 Collector-base breakdown voltage (V(R)Cao) The breakdown voltage between the collector and the base when the emitter is open (i.e., emitter current Ig0). 3.16 Emitter-base breakdown voltage (V(BR)EBo) The breakdown voltage between the emitter and the base when the collector is open (i.e., the collector current Ic=0). 3.17 Collector-emitter breakdown voltage (V(BR)CEO, V(BR>CER, V(BRCEx) The breakdown voltage between the collector and the emitter when the base is open (i.e., the base current Ic=0). Sometimes, the base is not open, but there is a specified resistor or a specified circuit between the base and the emitter. The corresponding collector-emitter breakdown voltage is expressed by V(BR>CER and V
Tip: This standard content only shows part of the intercepted content of the complete standard. If you need the complete standard, please go to the top to download the complete standard document for free.