GB 3430-1989 Semiconductor integrated circuit model naming method

This standard specifies the naming method for semiconductor integrated circuit models. This standard applies to semiconductor integrated circuits (hereinafter referred to as devices) produced in accordance with national standards for semiconductor integrated circuit series and varieties. GB 3430-1989 Semiconductor integrated circuit model naming method GB3430-1989 standard download decompression password: www.bzxz.net

National Standard of the People's Republic of China
Nomenclature of semiconductor integrated circuit models
The rule of type designatlon for semiconductorintegrated clrcuits
1 Subject content and scope of application
This standard specifies the nomenclature of semiconductor integrated circuit models. GB 3430—89
Replaces GR3430—B2
This standard is applicable to semiconductor integrated circuits (hereinafter referred to as devices) produced in accordance with the national standards for semiconductor integrated circuit series and varieties.
2 Model composition
The device model consists of five parts. The symbols and meanings of the five groups or parts are as follows: Part I
Device represented by letters
Conform to national standards
CConform to national standards
Part I
Device type represented by letters
TTL circuit
HTL circuit
ECL circuit
CMOS circuit
Memory
Microcomputer circuit
Linear amplifier
Voltage converter
Non-linear circuitbzxz.net
Interface circuit
A /D converter
D/A converter
Audio and television circuits
Special circuits for communication
Sensitive circuits
Clock and watch circuits
Part 2
Using Arabic numerals and
characters to indicate
Series and variety codes of devices
Part 2
Using letters to indicate
Working temperature range of devices
Approved by the Ministry of Electronics Industry of the People's Republic of China in March 1989
0~70℃
..-25~-85℃
--55~85℃
.- 55~-125T
Fourth Division
Use letters to indicate device packages
Multilayer ceramic flat
Plastic flat
Black ceramic flat
Multilayer ceramic dual in-line
Black ceramic in-line plug
Plastic dual in-line barrel
Plastic single in-line plug
Metal diamond
Metal round
Ceramic sheet carrier
Plastic sheet carrier
Grid array
1990-04-01Implementation
3 Examples
3.1 Schottky T11. Dual 4-input NAND gate CT54S20MD
3.24 000 series cMS quad bidirectional switch
CC4066
3.3 general purpose operational amplifier
GE3430-89
Multilayer ceramic dual in-line package (Part 4) 55-125℃ (Part 3)
A Schottky series dual 4-input NAND gate (Part 2) TTL circuit (Part 1)
Comply with national standards (Part 0)
Black. Porcelain dual in-line package (Part 4) 4 0～85℃(Part 3)
-4000 series quad bidirectional switch (Part 2)CMOS circuit (Part 1)
-Comply with national standards (Part 0)
Metal round package (Part 4)
0～70℃(Part 3)
General purpose operational amplifier (Part 2)Linear amplifier (Part 1)
Comply with national standards (Part 0)
Additional instructions:
G 3430—89
This standard is approved by the National Integrated Circuit Standardization Technical Committee. This standard was drafted by the Fourth Research Institute of the Ministry of Machinery and Electronics Industry. This standard was first issued in December 1982 and revised for the first time in March 1989.
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