Methods of measurement for EL2 concentration in semi-insulation Gallium arsenide by infra-red absorption

SJ 3249.4-1989 Infrared absorption test method for EL2 concentration in semi-insulating gallium arsenide SJ3249.4-1989 standard download decompression password: www.bzxz.net

Standard of the Ministry of Machinery and Electronics Industry of the People's Republic of China Infrared absorption test method for EL2 concentration in semi-insulating gallium arsenide Subject content and scope of application
SJ3249.4-89
This standard specifies the infrared absorption measurement principle, instrumentation, measurement steps, result calculation and accuracy of deep donor concentration E12 in semi-insulating gallium arsenide.
This standard is applicable to the determination of E12 concentration in undoped semi-insulating gallium arsenide, and is applicable to sample thickness of 2 to 4 mm. It is not suitable for measuring EL2 concentration in chromium-doped semi-insulating samples. 2 Principle
The EI2 deep electron trap light absorption coefficient in semi-insulating GaAs has a corresponding relationship with its concentration. The absorption coefficient at 1.0972μm is measured and the EL2 concentration is calculated by the empirical calibration formula. 3 Instruments and equipment
Spectrophotometer with a range of 0.8~2.5m or wider. 4 Test steps
4.1 Scan with absorption method for zero line calibration. The instrument should be carefully adjusted so that the fluctuation of zero line absorbance in the range of 0.8~2.5μm is no more than ±0.002.
4.2 Place the double-sided polished sample in the light path and align the light beam to the required measurement position. 4.3 Measure the absorption spectrum of the sample in the range of 0.8~2.5μm to obtain the absorbance A-wavelength curve, as shown in the figure: 5.59www.bzxz.net
Sample original wavelength 3.86cm
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Wavelength (×10)μm
Figure Absorption spectrum of typical semi-insulating gallium arsenide sample Approved by the Ministry of Machinery and Electronics Industry of the People's Republic of China on 1989-03-20 and implemented on 1989-03-25
5 Calculation of results
SJ32484-89
5.1 Based on the sample absorption spectrum recorded by the spectrophotometer. Calculate the EL2 concentration by the following formula: Ngl:=1.25×1016α
Where: N—-EL2 concentration (cm)
EL2 absorption coefficient (cm-1)
αCalculate by the formula below
Where: d sample thickness, cm
-The absorbance values ​​corresponding to 1.0972μm and 2.0μm in the spectrum, 5.2 Calculation of EL2 concentration of typical semi-insulating sample; 5.2.1 The sample thickness is known to be 0.386cm; (1)
5.2.2 The A-input curve obtained by the experiment is shown in the figure, and A is found. and A are 0.487 and 0.293 respectively, 5.2.3α is calculated by the following formula:
The concentration of sample EL2 is
6Report
The report content is as follows
a. Sample source and number
b. Diagram of measurement location,
ca and EL2 data,
α=0.487-0.293×2.30
=1.16(cm-1)
NL21.25×1016×1.16
=1.45×1016（cm-3）
d. Test date and name of tester.
7Accuracy
The measurement accuracy of this method is 10%.
Additional Notes:
This standard was drafted by the 46th Research Institute of the Ministry of Machinery and Electronics Industry. The main drafters of this standard are: Li Guangping, Xun Xiukun, Wang Qin, Zheng Ju, Ge Ping2
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