Test methods for evaporation rate of electronic materials

SJ 3205-1989 Determination of evaporation rate of electronic materials SJ3205-1989 standard download decompression password: www.bzxz.net

Ministry of Machinery and Electronics Industry of the People's Republic of China Standard SJ3205--89
Determination method of evaporation rate of electronic materials
Published on February 10, 1989
Implementation on March 1, 1989
Approved by the Ministry of Machinery and Electronics Industry of the People's Republic of China Ministry of Machinery and Electronics Industry of the People's Republic of China Standard Determination method of evaporation rate of electronic materials
1 Subject space and scope of application
1.1 This standard specifies the quartz crystal monitor method for determining the evaporation rate of electronic materials Evaporation rate of electronic materials 1.2 This standard applies to all solid electronic materials. 2 Methods Heat
SJ3205-89
Quartz crystal monitor method uses the principle of correlation between the resonant frequency of the quartz crystal oscillator and the mass disk of the quartz oscillator to measure the change in the resonant frequency of the quartz crystal oscillator caused by the deposited film to determine the mass and accumulation rate of the deposited film to calculate the evaporation rate of the material.
Place the sensor, a quartz crystal plate, directly above the evaporation source to be measured, and the evaporated material is deposited on the quartz crystal plate. The sensor receives only a part of the evaporated material, so the deposition rate needs to be converted into the evaporation rate according to the geometric size.
3 Test equipment
. . High vacuum dynamic test system:
b. Film deposition monitor: OMNI III; c. DC electronic voltage regulator: 0~1000V, 100mA; 0~5V, 5A, 1 each: d. Micro-light pyrometer;
e. Thermocouple thermometer.
4 Sample preparation
4.1 Generally, the test material is made into a 5×5mm, 0.5mm thick sheet. The maximum allowable sample size is 15×15mm, 2mm thick.
4.2 Clean the above sheets according to the cleaning, hydrogen burning and degassing specifications of the electric vacuum device parts. 5 Test steps
5.1 Spot weld the sample on the method On the ceramic core column of the blue disk, the heating filament, sensor and baffle are welded to form a test assembly, as shown in Figure 1.
Approved by the Ministry of Machinery and Electronics Industry of the People's Republic of China on February 10, 1989 and implemented on March 1, 1989
SJ3205-89
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Figure 1 Schematic diagram of the test assembly
1-heater: 2-sample to be tested: 3-rotatable baffle; 4, 7, 8-support rod: 5-sensor; 6-sensor signal output line: 9-flange: 10-eight-pin ceramic core column 11-tube needle 5.2 Insert the above test assembly into the dynamic vacuum system. 5.3 Evacuate the vacuum chamber. When the pressure in the analysis chamber is less than 5×10-P, bake the vacuum system for 4 hours, and when the pressure is less than 1x10-P, the test can be carried out.
5.4 Turn on the circuit, insert the baffle between the sample and the sensor, and heat the sample to the required evaporation temperature by electron bombardment until the temperature stabilizes.
5.5 Input the program and relevant data to put the thin film deposition monitor in the test state. 5.6 Remove the baffle, and the instrument automatically displays the deposition thickness and time until the preset time (or thickness) is reached, and record the next set of data. The evaporation time varies depending on the evaporation deposition rate. In order to ensure the accuracy of the calculation, t should generally not be less than 20s.
5.7 Change a temperature value, repeat steps 5.4 to 5.6, and measure another set of data. And so on, measure more than five sets of data.
6 Calculation
SJ3205-89
Assuming that the evaporation rate is constant, the deposition rate M on the sensor can be converted into the evaporation rate M of the sample through the geometric factor according to the following formula;
M=nh2M'nhzdDZ
Wherein: h-the distance between the evaporant and the sensor, cm; d-the deposition thickness on the sensor, cm;
D-—density of the deposition material, g/cm;
t——deposition time, s:
ZThe geometric factor is given in the instrument manual. The MT curve is drawn from the data measured in 5, as shown in Figure 2. M
（9/cm-s）
Figure 2M-T relationship curve
7Precision
This method uses a highly stable reference frequency fo, which changes by 10-11 per month. The frequency change of the crystal can be measured by fo, which is 10-10 of its oscillation frequency value. The frequency reading error is less than ±2%. The instrument can display the change of evaporation thickness by 0.01nm, and can measure the mass change by 10g/cm28Main sources of error
8.1The influence of the temperature change of the quartz crystal of the sensor. 8.2The influence of residual gas in the evaporation chamber,
8.3The difference between the density of the evaporated film and the density of the bulk material9Precautions
9.1The sensor must be far enough away from the evaporation source so that the temperature rise caused by the evaporation radiation heat does not exceed 100c.
9.2The vacuum degree of the evaporation chamber must be maintained during the test, so that the evaporation deposition rate of the material to be tested is much greater than the deposition rate of the gas to prevent the deposition film structure from changing.
Additional Notes:
SJ3205-89bzxz.net
This standard was drafted by the Electronic Standardization Research Institute of the Ministry of Machinery and Electronics Industry. The main drafters of this standard are Chen Desen and Mo Chunchang. 4
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