Test method for high frequency dielectric losses and permittivity of electronic glass

time: 2024-07-14 15:51:54
  • SJ/T 11043-1996
  • in force

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  • China Standard Classification Number:

    General>>Standardization Management and General Provisions>>A01 Technical Management

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SJ/T 11043-1996 Test method for high frequency dielectric loss and dielectric constant of electronic glass SJ/T11043-1996 Standard download decompression password: www.bzxz.net



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National Standard of the People's Republic of China
Test method for high frequency dielectric losses and dielectric constant of electronic glassbzxZ.net
Test method for high frequency dielectric losses and dielectric constant of electronic glass This standard is applicable to the test of high frequency dielectric loss and dielectric band number of electronic glass. 1 Method Summary
GB9622.9-88
Reduced to SJ/T11043-96
This standard uses a Q meter to measure the tuning circuit without and with the sample connected in the high frequency band twice according to the resonance principle to obtain the quality factor and circuit capacitance in the resonant circuit, and obtain the tangent value of the dielectric loss angle and the dielectric constant by calculation. 2 Test instruments and materials
2.1 High frequency Q meter, oscillation frequency range: 50kHz~50MHz, capacitance adjustment range: 40~400pF, Q value measurement range: 20~300. 2.2 Vernier caliper.
2.3 Anhydrous ethanol, analytical grade.
2.4 Low-temperature silver paste.
3 Sample preparation
3.1 Select a glass disc with no defects such as stones, bubbles and streaks, with a diameter of 40mm and a thickness of 3mm, and perform annealing treatment to eliminate stress.
3.2 Grind the surface of the sample to a thickness of 2.5±0.5mm. 3.3 The sample is cleaned and dried with steamed water and anhydrous ethanol, and coated with low-temperature silver paste on both surfaces. It is placed in a high-temperature furnace and kept at 460500℃ for 10 minutes, and then slowly cooled to room temperature. The surface coating should be tight and uniform, and have good conductivity. Finally, use fine sandpaper to grind off the silver layer on the edge, and then clean it with anhydrous ethanol.
3.4 ​​Weld wires at symmetrical positions on both sides of each sample. 4 Test steps
4.1 Accurately measure the diameter and thickness of the sample.
.4.2 Turn on the Q meter power supply and preheat.
4.3 According to the frequency required by the sample, select the inductor with the largest Q value and connect it to the inductor terminal of the Q meter, and select the frequency required for the test on the frequency band adjustment dial.
4.4 Adjust the Q meter.
4.5 Adjust the loop capacitance to make it resonant, and record the Q meter reading Q and capacitance C1. 4.6 Connect the sample to the Q meter connecting the sample terminal, and then adjust the loop capacitance to resonance, and record the Q meter reading Q2 and capacitance C2. 5 Calculation
5.1 Use (1) to calculate the dielectric loss tangent value t8p Ministry of Electronics Industry of the People's Republic of China Approved on March 21, 1988 1
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Implementation on February 1, 1989
GB9622.9-88
(QQ2)(Ch—Co)
(C,— C2) Q . Q2
Where: Co——distributed capacitance of the inductor coil, pF, which can generally be ignored, Q—quality factor of the loop when the sample is not connected; Ci-capacitance of the loop when the sample is not connected, pF; Q——quality factor of the loop when the sample is connected; C,——capacitance of the loop when the sample is connected, pF. 5.2 Use formula (2) to calculate the dielectric constant e (pF/m) of the sample c.8
Where: C—capacitance of the sample, pF;
o-thickness of the sample, m;
D-diameter of the sample, m.
6Test results
This method allows a measurement error, expressed as t9, of 0.0002. When the difference between the data of five parallel measurements of the same batch of samples is within this range, the average value is taken as the test result.
Additional Notes:
This standard was drafted by Factory 4401, Factory 4404, Factory 4400 and the Standardization Research Institute of the Ministry of Electronics Industry. The main drafters of this standard are Shen Yanxun, Luo Shenghua, Bai Yixiang, Pang Shuqin and Liu Chengjun. 2
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