GB/T 4060-1983 Silicon polycrystalline vacuum zone melting base boron test method

This standard applies to silicon polycrystalline rods grown by depositing silicon polycrystalline on thin silicon cores by hydrogen reduction of trichlorosilane and silicon tetrachloride. GB/T 4060-1983 Boron test method for silicon polycrystalline vacuum zone melting GB/T4060-1983 standard download decompression password: www.bzxz.net

National Standard of the People's Republic of China
Polycrystalline silicon--Examinationmethod -- Vac uum zone-melting on boronUDC669.782:548
.2:543.06
GB 4060.-.. 83
This standard is applicable to the detection of silicon polycrystalline rods grown by the reduction of difluorohydrogen silicon and silicon tetrachloride on thin silicon cores. The effective range of impurity concentration is 0.02~20ppba. The P-type resistivity range is 500~100002·cm. 1 Principle of the methodbzxZ.net
1.1 Principle
The difference in the effective segregation coefficient of phosphorus and boron in silicon during silicon zone melting and the difference in the evaporation rate of phosphorus and boron from silicon are used. 1.2 Method
Vacuum zone melting method.
2 Sample preparation
2.1 Sampling location
Except for the overlap of the silicon core of the bridge-shaped silicon polycrystalline rod or the 10mm-section of the straight silicon polycrystalline rod away from the graphite chuck head, the sample can be taken (as shown in Figure 1). 2.2 Sample size
Diameter 10~40mm.
Length 70~200mm.
2.3 Sample treatment
2.3.1 Wash the sample in chemically pure sodium hydroxide to remove oil. 2.3.2 Wash with chemically pure ethanol for 20 to 30 seconds and then rinse with deionized water with a resistivity greater than 10M2. 2.3.3 Etch in a mixed acid solution of high-grade pure HF: HNO, = 1: (3 to 5) volume for 2 minutes. 2.3.4 Etch in a mixed acid solution of high-grade pure HF: HNO, = 1: (3 to 5) volume for 2 minutes. 2.3.5 Rinse the sample with deionized water with a resistivity greater than 10M2 until it is neutral. 2.3.6 Boil the sample with ultrasonic waves or deionized water for multiple times, wash, dry, and package for use. Issued by the National Bureau of Standards on December 20, 1983
Implementation on December 1, 1984
3 Instruments and Equipment
Internal Heat Zone Furnace.|| tt||Seed crystal preparation
4.1 Seed crystal specifications
GB4060—83
Thin silicon core
No sampling allowed
P-type <1l1> silicon single crystal with a resistivity of more than +26002.cm. Cut into 5mm×5mm×50mm. 4.2 Seed crystal treatment
2.3 Sample treatment.
Test conditions
5.1 Vacuum degree
The temperature should be 1×104～1×10-hmmHg. 5.2 Zone melting speed and number
First pull quickly. Then, the speed is 0.0mm each time, minlx melting for more than 13 times or equivalent to the speed of 0.5mm.min [x melt 6 times or more.
5.3 Melt zone height
equal to the diameter of the test rod.
5.4 Melt zone travel
greater than 10 melt zones.
5.5 Test result size
diameter 10±2mm.
length greater than 10 melt zones.
5.6 Melt zone treatment
GB4060-
The second and third unmelted zones are lowered by one melt zone height than the previous one. From the third time onwards, the position of the unmelted zone is fixed each time, and the volatilization time
melt zone height
zone melting speed
test method
6.1 Test of conductive model
according to GB 1550-79 "Determination of Silicon Single Crystal Conductivity Type" is tested. 6.2 Test of Longitudinal Resistivity
Test in accordance with the provisions of GB1551-79 "DC Two-Probe Measurement Method for Silicon Single Crystal Resistivity". 7 Value of Boron Resistivity
After zone melting test, silicon polycrystalline samples are required to be all P-type single crystals. The distribution of the longitudinal resistivity curve of the test results is close to the theoretical curve (as shown in Figure 2). The resistivity value from the first melting zone to 60% of the length of the test rod is taken as the boron resistivity value of silicon polycrystalline. p(2.cm)
Additional Notes:
This standard was proposed by the Ministry of Metallurgical Industry of the People's Republic of China. This standard was drafted by Emei Semiconductor Materials. The main drafter of this standard was Zhao Zupei.
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