Method for measurement of average dislocation density of Aluminium foil for electroytic capacitor

SJ/T 10557.3-1994 Measurement method for average dislocation density of aluminum foil for electrolytic capacitors SJ/T10557.3-1994 Standard download decompression password: www.bzxz.net

Electronic Industry Standard of the People's Republic of China
SJ/T10557.394
Method for measurement of average dislocation density of aluminium foil for electroytic capacitor
Method for measurement of average dislocation density of aluminium foil for electroytic capacitor1994-08-08 Issued
1994-12-01 Implementation
Issued by the Ministry of Electronics Industry of the People's Republic of China Electronic Industry Standard of the People's Republic of China
Method for measurement of average dislocation density of aluminium foil for electroytic capacitor1 Subject content and scope of application
This standard specifies the measurement method of average dislocation density of aluminium foil for electrolytic capacitor. SJ/T10557.3-94
This method is applicable to aluminium foil for electrolytic capacitors with an average dislocation density of 0~9×10°cm. 2 Terminology
2.1 Dislocation
Some atoms in a crystal slip under stress, and the boundary between the slipped part and the non-slipped part is the dislocation line, referred to as dislocation.
2.2 Dislocation etch pits Under chemical etching, the regular-shaped etch pits formed at the outcropping of dislocations on the surface of the crystal are called dislocation etch pits. 2.3 Average dislocation density averagedislocationdensity The average dislocation density of this method refers to the average value of the number of dislocation etch pits per unit area measured from 16 measurement points (cm2).
3 Principle
Dislocations are displayed using selective chemical etching technology. Since the dislocation line causes lattice deformation around it and forms a pipe-like stress field, the chemical potential at this location is different from that of the matrix. In some chemical etchants, dislocations are preferentially corroded at the outcropping of the crystal surface, forming regular etch pits composed of low-index crystal planes. The shape of the etch pit depends on the crystal plane index to which the sample surface belongs. 4 Reagents
Anhydrous ethanol (CH, CH2OH): analytical grade; perchloric acid (HCLO.): high grade pure:
Nitric acid (HNO3) analytical grade:
Hydrochloric acid (HCL): analytical grade;
Hydrofluoric acid (HF): high grade pure;
Deionized water (H,0): resistivity greater than 1MQ·cm. Approved by the Ministry of Electronics Industry of the People's Republic of China on August 8, 1994 and implemented on December 1, 1994
5 Sample preparation
5.1 Sample size, 10mm×15mm.
5.2 Electrolytic polishing
SJ/T10557.3—94
5.2.1 Electrolytic polishing solution: HCLO: CH, CH, OH = 1: (4~9) volume ratio). 5.2.2 Electrolytic polishing conditions:
Electrolytic material: stainless steel;
Voltage 15~20V;
Polishing temperature: <30℃.
5.2.3 Polishing surface size, not less than 10mm×15mm. 5.3 Dislocation corrosion
Corrosion liquid: HNO,: HCL: HF: H,O-3,9,25 (volume ratio); 5.3.2
Corrosion time: about 3.5min.
6 Testing equipment
DC power supply (25V, 2A);
b. Scanning electron microscope or metallographic microscope. 7 Dislocation pit characteristics
Discrete square shallow pits appear on the (100) surface (see Figure 1). Discrete rectangular shallow pits appear on the (110) surface (see Figure 2). (111 It appears as discrete triangular shallow pits on the surface (see Figure 3). 8 Dislocation pit counting method
8.1 Selection of measurement points: 16 measurement points are selected, and their positions are shown in Figure 4. If corrosion perforation occurs at the measurement point, the point should be slightly offset.
8.2 When observing under a microscope, the magnification should be such that the number of dislocation pits in each field of view is greater than 50. 9 Calculation of average dislocation density
The average dislocation density is calculated as follows:
Where: D average dislocation density (pieces/cm2); N,——number of dislocation pits at the measurement point (pieces); A,——field area of ​​the ith measurement point (cm\). 10 Accuracy
The measurement accuracy of this method is ±2.5 %.
11 Test reportWww.bzxZ.net
Fill in the test report in the following format.
Figure 1 (100) dislocation pit × 435
Figure 3 (111) dislocation pit × 435
Additional instructions:
SJ/T10557.3-94
This standard is under the jurisdiction of the Standardization Institute of the Ministry of Electronics Industry. This standard was drafted by the 46th Institute of the Ministry of Electronics Industry. The main drafters of this standard are Wang Lijie and Qi Yunxin. Year Month Day
Average dislocation density (pieces/cm2)
Tester:
Figure 2 (110) dislocation pit × 435
Figure 4 Schematic diagram of measurement position
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