GB/T 15450-1995 Blank Detail Specification for Silicon Dual-Gate Field Effect Transistor
time:
2024-08-08 20:16:39
- GB/T 15450-1995
- Abolished
Standard ID:
GB/T 15450-1995
Standard Name:
Blank Detail Specification for Silicon Dual-Gate Field Effect Transistor
Chinese Name:
硅双栅场效应晶体管空白详细规范
Standard category:
National Standard (GB)
-
Date of Release:
1995-01-05 -
Date of Implementation:
1995-08-01 -
Date of Expiration:
2005-10-14
Standard ICS number:
Electronics>>Semiconductor devices>>31.080.99 Other semiconductor devicesChina Standard Classification Number:
Electronic Components & Information Technology >> Discrete Semiconductor Devices >> L44 Field Effect Devices
alternative situation:
void;Procurement status:
IEC 747-8-1, IDT
Review date:
2004-10-14Drafting Organization:
Shanghai Radio Factory No. 14Focal point Organization:
National Semiconductor Device Standardization Technical CommitteePublishing Department:
State Bureau of Technical SupervisionCompetent Authority:
Ministry of Information Industry (Electronics)
Description (Translated English) / downloadSkip to download
Summary:
This blank detailed specification specifies the basic principles for the development of silicon dual-gate field effect transistor detailed specifications. All detailed specifications within this scope should be developed in accordance with this blank detailed specification. This blank detailed specification is one of the series of blank detailed specifications for semiconductor devices and should be used together with the following specifications: GB 4589.1 "General Specification for Semiconductor Devices Discrete Devices and Integrated Circuits", GB 12560 "Sectional Specification for Semiconductor Devices Discrete Devices" GB/T 15450-1995 Blank Detailed Specification for Silicon Dual-Gate Field Effect Transistor GB/T15450-1995 Standard Download Decompression Password: www.bzxz.net
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