Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors

SJ 2757-1987 Infrared reflection test method for carrier concentration of heavily doped semiconductors SJ2757-1987 standard download decompression password: www.bzxz.net

Standard SJ2757-87 of Ministry of Electronics Industry of the People's Republic of China
Infrared reflection test method for carrier concentration of heavily doped semiconductors
Published on February 10, 1987
Implemented on July 1, 1987
Approved by Ministry of Electronics Industry of the People's Republic of China Standard SJ2767-87 of Ministry of Electronics Industry of the People's Republic of China
Infrared reflection test method for carrier concentration of heavily doped semiconductors This standard is suitable for measuring the carrier concentration of heavily doped semiconductor materials, and is also suitable for measuring the carrier concentration of epitaxial layers, buried layers and diffusion layers.
The measurement concentration range is:
isi, 1,5×101a~-1,5x102/cm-,P-si, 3.0×1018~5.0×102ncm8;nG.A.!7.0x1017~1.0X1019cm-3F-GA: 2.6×10~1.3x102'cm-\,n--1.P: 7.0×101*~1,0x10:+cm-*.1Principle
In the infrared region, the reflectivity of heavily doped semiconductor materials is a function of wavelength. There is a corresponding relationship between the carrier concentration and the wavelength with the minimum reflectivity. After the minimum reflectivity wavelength is measured and entered into nin, the carrier concentration is obtained by the concentration calibration formula. 2 Precautions
2.1 The sample to be measured should have a good optical surface to ensure that the measurement results reflect the intrinsic properties of the material. 2.2 The comparative measurement should be carried out at the same position to avoid being affected by sample non-uniformity. 2.3 When the sample mobility is abnormally low, the comparative measurement results may be inconsistent. 2.4 For the diffusion layer, the junction depth is required to be greater than 1μm. 3 Instruments
3.1 Infrared spectrometer
3.1.1 Dispersive double-beam infrared spectrophotometer or Fourier transform infrared spectrometer with wavelength or wavenumber scanning. 3.1.2 Liquid wavelength range 2 to 100μm. If the wavelength range is narrow, the measurement scene concentration range is reduced. 3.1.3 The wavelength repeatability defined in Appendix A, 1 is at least 0.05um. 3.1.4 The wavelength accuracy as defined in Appendix A, 2 shall be at least ± 0,05 μm. 1.5 At 1000 cm-1, the spectral resolution shall be not less than 2 cm-1 3.2 Instrument accessories
3.2.1 Reflection accessories The incident angle shall not be greater than 30° 4 Samples
4.1 Bulk materials
4.1.1 The sample surface shall be ground and polished mechanically or chemically on one side. 4.2 Other materials
4.2.1 For epitaxial layers, buried layers, and diffusion layers, no special treatment is generally required. When there is oxide on the surface, it should be removed first.
5 Calibration
Issued by the Ministry of Electronics Industry on February 10, 1987
Implemented on July 1, 1987
SJ2757-87
5.1 Determine the wavelength accuracy and repeatability with reference to Appendix A, 1 and A, 2. 5.2 Place the reflection accessory in the optical path and make a 100% line measurement. 5.3 If the peak-to-valley value of the full coordinate 100% reflection line is less than 8%, the measurement result is acceptable. Otherwise, a 100% line transmission measurement should be made or the reflection accessory should be checked.
6 Measurement range
6.1 The material type and conductive model should be known before measurement. 6.2 The maximum scanning speed should meet 3.1.3 to 3.1.5 at the same time. 6.3 Record the reflection spectrum. If the minimum wavelength value of the reflectivity does not appear, the carrier concentration of the sample is not within the application range of this method.
Package.4 For silicon materials, use the vertical coordinate expansion. 6.5 Within 100ctm-1 on both sides of the extreme value of the reflectivity curve, draw two straight lines that intersect or are tangent to the function line. 6.6 The intersection of the two straight lines is the determined minimum wavelength in, as shown in the figure. 7.1 Calculate the concentration by the formula: N(AAmin→+C)B B Report N - carrier concentration, cm \ Input mi - minimum reflectivity wavelength, μm: A, B, C - constants given in Table 1. 8.1 Report the following: B, 1, 1 Measurement conditions. 8.1.2 Materials and conductive plastics. 8.1.3 Minimum reflectivity wavelength. 8.1, 4 Carrier concentration. 8.1.5 Diagram of sample measurement location. 8.1.6 Other instruments used.
9 Sugar density
9.1 In the 101B~10\Pcm-\ range, for nP type Si materials, the precision of multiple laboratories R1S (failure) is 5%. This result is based on the cyclic measurement of eight samples and ten laboratories. 9.2 In the 1017~1018cm concentration range, for n-type G, A. and IP materials, the precision of multiple laboratories R1S (%) is 4. This result is based on the cyclic measurement of seven samples and one laboratory. 2
$J2757-87
Wave number (cm-)
Figure 1 Schematic diagram of bowl-fixed mwwW.bzxz.Net
Applied wavelength
2,5~5,4
5.4~~32.4
9.4--18.5
18.5~30.4
30.4~~33.9
33,0~ ~100.0
25.0-100.0
Note: "For convenience, use the second emissivity to minimize wavelength. Constant table
3.039×10-13
4.097×10-11
8.247×10-16
5.803×10*11
2.405×10#
1.188 ×10\8
2.592×10-*
5.566×10-13
4.896×10-0
3.784X10-
—2.5617
—2,6371
5.516×10-12
2.626×10~1a
SJ2757-87
Appendix A
Calculation of wavelength accuracy and repeatability
(Supplement)
A1 Wavelength repeatability: It is a measure of instrument performance, that is, when a certain absorption or emission band is repeatedly measured in a given wavelength range, the average of the measurement mean and the average of the measurement difference, expressed as: n||tt ||Wavelength repeatability = [
Wherein:
)/, is the average value of the second measurement, is the maximum number of times, -1
Input is the ith measured value,
A,2 Wavelength accuracy: The difference between the average value of the wavelength position of a certain absorption or emission band and the theoretical value of the band, is: Wavelength accuracy ± - theoretical value!
Wherein: The meaning of the element is the same as A, 1, the theoretical value is the absorption wavelength theoretical value. A,3 When performing wavelength repeatability or accuracy measurement, select a polystyrene film with a thickness of 300-500μ as the standard sample, and use the 3.303μm band of the film as the measurement reference band, and the maximum number of measurements is 10 times. Additional notes:
This standard was issued by the 46th Institute of the Ministry of Electronics Industry and the Standardization Institute of the Ministry of Electronics Industry.
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